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IRFR2405TRPBF 222-4751

INFINEON TECHNOLOGIESIRFR2405TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 56AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IRFR2405TRPBF
Thương hiệu
INFINEON TECHNOLOGIES
Mã kho
222-4751
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFR2405TRPBF
Channel Type N
Maximum Continuous Drain Current 56A
Maximum Drain Source Voltage 55V
Package Type DPAK (TO-252)
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 16mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Transistor Material Silicon
Number of Elements per Chip 1

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