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INFINEON TECHNOLOGIESIRFS3006TRL7PPTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 293A
Mã nhà sản xuất
IRFS3006TRL7PP
Thương hiệu
Mã kho
130-0993
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFS3006TRL7PP
Channel Type N
Maximum Continuous Drain Current 293A
Maximum Drain Source Voltage 60V
Package Type D2PAK-7
Series HEXFET
Mounting Type Surface Mount
Pin Count 7
Maximum Drain Source Resistance 2.1mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 375W
Maximum Gate Source Voltage -20 V, +20 V
Width 4.83mm
Typical Gate Charge @ Vgs 200 nC @ 20 V
Number of Elements per Chip 1
Maximum Operating Temperature +175°C
Length 10.67mm
Height 9.65mm
Forward Diode Voltage 1.3V
Minimum Operating Temperature -55°C

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