INFINEON TECHNOLOGIESIRFS4229TRLPBFTransistor: N-MOSFET
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating. Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain
Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability