INFINEON TECHNOLOGIESIRFS7437TRLPBFTransistor: N-MOSFET
N-Channel Power MOSFET 40V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications. Features & Benefits Supports a maximum continuous drain current of 250A for high-power applications Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses Designed for surface mounting, simplifying installation Capable of handling rapid switching applications, which enhances efficiency Applications Suitable for brushed motor drive Ideal for battery-powered circuits, enabling efficient power usage Employed in half-bridge and full-bridge topologies for precise control Utilised in synchronous rectifier to enhance energy savings Applicable in resonant mode power supplies for stable performance How is the power dissipation managed during operation? Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions. What is the significance of the low Rds(on) value? The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications. Can this be used in high-temperature environments? With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments. What installation considerations should I be aware of? Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF
This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications.
Features & Benefits
- Supports a maximum continuous drain current of 250A for high-power applications
- Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
- Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
- Designed for surface mounting, simplifying installation
- Capable of handling rapid switching applications, which enhances efficiency
Applications
- Suitable for brushed motor drive
- Ideal for battery-powered circuits, enabling efficient power usage
- Employed in half-bridge and full-bridge topologies for precise control
- Utilised in synchronous rectifier to enhance energy savings
- Applicable in resonant mode power supplies for stable performance
How is the power dissipation managed during operation?
Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.
What is the significance of the low Rds(on) value?
The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications.
Can this be used in high-temperature environments?
With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.
What installation considerations should I be aware of?
Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.