INFINEON TECHNOLOGIESIRFU120NPBFTransistor: N-MOSFET
Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling. Features & Benefits Designed for enhancement mode operation, offering reliable switching High power dissipation capability of 48W enhances performance Ideal for high current applications in robust electronic designs Single Si MOSFET configuration ensures simplified integration Applications Used in power management solutions for automation systems Used in motor control circuits for industrial machinery Utilised in power converters for renewable energy systems Suitable for consumer electronics requiring reliable power delivery Integral to motor drives in electrical and mechanical What is the significance of the low Rds(on) value? The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial. How does the MOSFET perform under extreme temperatures? With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common. What benefits does the enhancement mode provide for circuit designers? Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management. Can this MOSFET be used in high power applications? Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF
This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.
Features & Benefits
- Designed for enhancement mode operation, offering reliable switching
- High power dissipation capability of 48W enhances performance
- Ideal for high current applications in robust electronic designs
- Single Si MOSFET configuration ensures simplified integration
Applications
- Used in power management solutions for automation systems
- Used in motor control circuits for industrial machinery
- Utilised in power converters for renewable energy systems
- Suitable for consumer electronics requiring reliable power delivery
- Integral to motor drives in electrical and mechanical
What is the significance of the low Rds(on) value?
The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.
How does the MOSFET perform under extreme temperatures?
With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.
What benefits does the enhancement mode provide for circuit designers?
Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.
Can this MOSFET be used in high power applications?
Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.