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INFINEON TECHNOLOGIESIRFZ44NPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 49A
Mã nhà sản xuất
IRFZ44NPBF
Thương hiệu
Mã kho
540-9777
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments. Features & Benefits Utilises enhancement mode for responsive control Low resistance of 17.5mΩ for effective power management Fast switching speeds for improved system performance Applications Suitable for DC-DC converters Motor drives and control systems Renewable energy systems, such as solar inverters What impact does the low resistance have on performance? The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits. How does temperature affect the continuous drain current? Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments. Can this component handle repetitive avalanche conditions? Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability. What type of applications benefit most from using this MOSFET? This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

  • Utilises enhancement mode for responsive control
  • Low resistance of 17.5mΩ for effective power management
  • Fast switching speeds for improved system performance

Applications

  • Suitable for DC-DC converters
  • Motor drives and control systems
  • Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFZ44NPBF
Channel Type N
Maximum Continuous Drain Current 49A
Maximum Drain Source Voltage 55V
Package Type TO-220AB
Series HEXFET
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 17.5mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 94W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 63 nC @ 10 V
Width 9.02mm
Length 10.67mm
Transistor Material Si
Maximum Operating Temperature +175°C
Forward Diode Voltage 1.3V
Minimum Operating Temperature -55°C
Height 8.77mm

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