INFINEON TECHNOLOGIESIRL1404ZSTRLPBFTransistor: N-MOSFET
Channel Type NMaximum Continuous Drain Current 200AMaximum Gate Threshold Voltage 2.7VKiểu lắp Surface Mount
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This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It is lead-free
This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
It is lead-free