INFINEON TECHNOLOGIESIRL3705NPBFTransistor: N-MOSFET
N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments. Features & Benefits Low Rds(on) of 10mΩ for increased efficiency Operates in enhancement mode for innovative circuit designs Fast switching capabilities for improved system responsiveness Fully avalanche rated for durability in demanding situations Applications Suitable for industrial power management systems Ideal for motor drive in automation Compatible with power supplies that require low thermal resistance Utilised in DC-DC converters for enhanced energy efficiency What is the maximum power dissipation capability? The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions. Is it suitable for high temperatures? This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios. What is the significance of the gate threshold voltage range? The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages. What considerations are there for using this in a circuit? Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF
This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.
Features & Benefits
- Low Rds(on) of 10mΩ for increased efficiency
- Operates in enhancement mode for innovative circuit designs
- Fast switching capabilities for improved system responsiveness
- Fully avalanche rated for durability in demanding situations
Applications
- Suitable for industrial power management systems
- Ideal for motor drive in automation
- Compatible with power supplies that require low thermal resistance
- Utilised in DC-DC converters for enhanced energy efficiency
What is the maximum power dissipation capability?
The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.
Is it suitable for high temperatures?
This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.
What is the significance of the gate threshold voltage range?
The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.
What considerations are there for using this in a circuit?
Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.