INFINEON TECHNOLOGIESIRL540NPBFTransistor: N-MOSFET
N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems. Features & Benefits Continuous drain current capability of 36A for demanding applications Low Rds(on) of 44mΩ minimises power losses during operation Enhancement mode design improves switching characteristics for efficiency Power dissipation rating of up to 140W accommodates high-performance scenarios Operating temperature range from -55°C to +175°C allows versatility Through hole mounting facilitates easy integration into existing systems Applications Power management in industrial automation systems Electric motor control in robotics DC-DC converters in renewable energy systems Power supplies requiring efficient switching functionality Consumer electronics for effective power distribution What are the maximum voltage and current ratings? The maximum drain-source voltage is 100V, with a continuous drain current of 36A. How does the low Rds(on) improve performance? A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load. What is the significance of the enhancement mode? This mode allows for improved control over operation, enabling efficient switching and application versatility. Can it be used in high-temperature environments? Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.
Features & Benefits
- Continuous drain current capability of 36A for demanding applications
- Low Rds(on) of 44mΩ minimises power losses during operation
- Enhancement mode design improves switching characteristics for efficiency
- Power dissipation rating of up to 140W accommodates high-performance scenarios
- Operating temperature range from -55°C to +175°C allows versatility
- Through hole mounting facilitates easy integration into existing systems
Applications
- Power management in industrial automation systems
- Electric motor control in robotics
- DC-DC converters in renewable energy systems
- Power supplies requiring efficient switching functionality
- Consumer electronics for effective power distribution
What are the maximum voltage and current ratings?
The maximum drain-source voltage is 100V, with a continuous drain current of 36A.
How does the low Rds(on) improve performance?
A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.
What is the significance of the enhancement mode?
This mode allows for improved control over operation, enabling efficient switching and application versatility.
Can it be used in high-temperature environments?
Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.