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INFINEON TECHNOLOGIESIRL540NSTRLPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 36A
Mã nhà sản xuất
IRL540NSTRLPBF
Thương hiệu
Mã kho
915-5086
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRL540NSTRLPBF
Channel Type N
Maximum Continuous Drain Current 36A
Maximum Drain Source Voltage 100V
Series HEXFET
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 63mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 140W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Typical Gate Charge @ Vgs 74 nC @ 5 V
Length 10.67mm
Width 11.3mm
Number of Elements per Chip 1
Maximum Operating Temperature +175°C
Transistor Material Si
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.3V
Height 4.83mm

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