Skip to content

INFINEON TECHNOLOGIESIRLB8314PBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1VMaximum Continuous Drain Current 171A
Mã nhà sản xuất
IRLB8314PBF
Thương hiệu
Mã kho
130-1015
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLB8314PBF
Channel Type N
Maximum Continuous Drain Current 171A
Maximum Drain Source Voltage 30V
Package Type TO-220AB
Series HEXFET
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3.2mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 125W
Maximum Gate Source Voltage -20 V, +20 V
Length 10.67mm
Typical Gate Charge @ Vgs 40 nC @ 4.5 V
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Width 4.83mm
Height 16.51mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare