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INFINEON TECHNOLOGIESIRLB8743PBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 150AMaximum Gate Threshold Voltage 2.35V
Mã nhà sản xuất
IRLB8743PBF
Thương hiệu
Mã kho
725-9325
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLB8743PBF
Channel Type N
Maximum Continuous Drain Current 150A
Maximum Drain Source Voltage 30V
Series HEXFET
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Power Dissipation 140W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Transistor Material Si
Number of Elements per Chip 1
Maximum Operating Temperature +175°C
Length 10.67mm
Typical Gate Charge @ Vgs 36 nC @ 4.5 V
Width 4.83mm
Minimum Operating Temperature -55°C
Height 9.02mm

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