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INFINEON TECHNOLOGIESIRLL024NTRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 4.4AMaximum Gate Threshold Voltage 2V
Mã nhà sản xuất
IRLL024NTRPBF
Thương hiệu
Mã kho
830-3300
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLL024NTRPBF
Channel Type N
Maximum Continuous Drain Current 4.4A
Maximum Drain Source Voltage 55V
Series HEXFET
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 100mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2.1W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Typical Gate Charge @ Vgs 10.4 nC @ 5 V
Length 6.7mm
Number of Elements per Chip 1
Width 3.7mm
Maximum Operating Temperature +150°C
Transistor Material Si
Height 1.739mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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