INFINEON TECHNOLOGIESIRLL024ZTRPBFTransistor: N-MOSFET
The Infineon HEXFET power MOSFET is Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
The Infineon HEXFET power MOSFET is Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax