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INFINEON TECHNOLOGIESIRLML0100TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 1.6AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
IRLML0100TRPBF
Thương hiệu
Mã kho
725-9350
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLML0100TRPBF
Channel Type N
Maximum Continuous Drain Current 1.6A
Maximum Drain Source Voltage 100V
Package Type SOT-23
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 235mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.3W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Transistor Material Si
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 2.5 nC @ 4.5 V
Maximum Operating Temperature +150°C
Width 1.4mm
Length 3.04mm
Minimum Operating Temperature -55°C
Height 1.02mm

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