INFINEON TECHNOLOGIESIRLML2803TRPBFTransistor: N-MOSFET
N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions. Features & Benefits Supports a maximum continuous drain current of 1.2A for effective performance High maximum drain-source voltage of 30V allows for versatile usage Low maximum drain-source resistance of 250mΩ minimises power losses Enhancement mode operation enables efficient switching capabilities Compact SOT-23 package is ideal for space-constrained applications Operates at high temperatures, with a maximum operating temperature of +150°C Applications Utilised in DC-DC converters for effective energy management Employed in motor control circuits for improved precision Suitable for power supply switching in consumer electronics Integrated into automation systems for efficient load management What is the optimal gate voltage for operation? The optimal gate voltage for this device is +10V, allowing for efficient switching and performance. How does it perform in high temperatures? This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions. Can it handle pulsed drain currents? Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges. What mounting type is recommended for this device? Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs. What precautions should be taken during installation? Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.
Features & Benefits
- Supports a maximum continuous drain current of 1.2A for effective performance
- High maximum drain-source voltage of 30V allows for versatile usage
- Low maximum drain-source resistance of 250mΩ minimises power losses
- Enhancement mode operation enables efficient switching capabilities
- Compact SOT-23 package is ideal for space-constrained applications
- Operates at high temperatures, with a maximum operating temperature of +150°C
Applications
- Utilised in DC-DC converters for effective energy management
- Employed in motor control circuits for improved precision
- Suitable for power supply switching in consumer electronics
- Integrated into automation systems for efficient load management
What is the optimal gate voltage for operation?
The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.
How does it perform in high temperatures?
This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.
Can it handle pulsed drain currents?
Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.
What mounting type is recommended for this device?
Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.
What precautions should be taken during installation?
Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.