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INFINEON TECHNOLOGIESIRLML6346TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3.4AMaximum Gate Threshold Voltage 1.1V
Mã nhà sản xuất
IRLML6346TRPBF
Thương hiệu
Mã kho
737-7234
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLML6346TRPBF
Channel Type N
Maximum Continuous Drain Current 3.4A
Maximum Drain Source Voltage 30V
Series HEXFET
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 80mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1V
Minimum Gate Threshold Voltage 0.5V
Maximum Power Dissipation 1.3W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 2.9 nC @ 4.5 V
Maximum Operating Temperature +150°C
Transistor Material Si
Width 1.4mm
Length 3.04mm
Height 1.02mm
Minimum Operating Temperature -55°C

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