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INFINEON TECHNOLOGIESIRLML9301TRPBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1.2VMaximum Continuous Drain Current 3.6A
Mã nhà sản xuất
IRLML9301TRPBF
Thương hiệu
Mã kho
725-9366
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V. Features & Benefits Enhancement mode configuration allows for efficient operation High gate threshold voltage range enhances reliability Greater thermal resilience Optimised for Pulled Drain Current ratings, increasing performance reliability Applications Used for power management in portable gadgets Ideal for automation control systems Utilised in audio amplifiers and signal processors Suitable for DC-DC converters in renewable energy systems Great fit for driving motors in robotic What is the impact of the low on-resistance value on performance? The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications. How does the enhancement mode benefit circuit design? The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss. Can this component handle high temperatures? Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF

This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.

Features & Benefits

  • Enhancement mode configuration allows for efficient operation
  • High gate threshold voltage range enhances reliability
  • Greater thermal resilience
  • Optimised for Pulled Drain Current ratings, increasing performance reliability

Applications

  • Used for power management in portable gadgets
  • Ideal for automation control systems
  • Utilised in audio amplifiers and signal processors
  • Suitable for DC-DC converters in renewable energy systems
  • Great fit for driving motors in robotic

What is the impact of the low on-resistance value on performance?

The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.

How does the enhancement mode benefit circuit design?

The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.

Can this component handle high temperatures?

Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLML9301TRPBF
Channel Type P
Maximum Continuous Drain Current 3.6A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 64mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.4V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1.3W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 1.4mm
Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V
Number of Elements per Chip 1
Length 3.04mm
Maximum Operating Temperature +150°C
Transistor Material Si
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V
Height 1.02mm

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