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INFINEON TECHNOLOGIESIRLML9303TRPBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 2.3AMaximum Gate Threshold Voltage 2.4V
Mã nhà sản xuất
IRLML9303TRPBF
Thương hiệu
Mã kho
725-9369
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLML9303TRPBF
Channel Type P
Maximum Continuous Drain Current 2.3A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 165mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.4V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1.25W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 1.4mm
Number of Elements per Chip 1
Length 3.04mm
Transistor Material Si
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 2 nC @ 4.5 V
Height 1.02mm
Minimum Operating Temperature -55°C

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