INFINEON TECHNOLOGIESIRLMS1503TRPBFTransistor: N-MOSFET
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3.2AKiểu lắp Surface Mount
Liên hệ
The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. Ultra low Rds N-channel
The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low Rds
N-channel