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INFINEON TECHNOLOGIESIRLR3410TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 17AMaximum Gate Threshold Voltage 2V
Mã nhà sản xuất
IRLR3410TRPBF
Thương hiệu
Mã kho
830-3379
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLR3410TRPBF
Channel Type N
Maximum Continuous Drain Current 17A
Maximum Drain Source Voltage 100V
Package Type DPAK (TO-252)
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 155mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 79W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Typical Gate Charge @ Vgs 34 nC @ 5 V
Width 6.22mm
Transistor Material Si
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Length 6.73mm
Height 2.39mm
Minimum Operating Temperature -55°C

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