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INFINEON TECHNOLOGIESIRLR3636TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 99AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
IRLR3636TRPBF
Thương hiệu
Mã kho
830-3372
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLR3636TRPBF
Channel Type N
Maximum Continuous Drain Current 99A
Maximum Drain Source Voltage 60V
Series HEXFET
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 8.3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 143W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Maximum Operating Temperature +175°C
Transistor Material Si
Typical Gate Charge @ Vgs 49 nC @ 4.5 V
Length 6.73mm
Width 6.22mm
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 2.39mm

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