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INFINEON TECHNOLOGIESIRLTS2242TRPBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 6.9AMaximum Gate Threshold Voltage 1.1V
Mã nhà sản xuất
IRLTS2242TRPBF
Thương hiệu
Mã kho
830-3401
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel Power MOSFET 12V to 20V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRLTS2242TRPBF
Channel Type P
Maximum Continuous Drain Current 6.9A
Maximum Drain Source Voltage 20V
Package Type TSOP-6
Series HEXFET
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 55mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 2W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Length 3mm
Transistor Material Si
Width 1.75mm
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 12 nC @ 4.5 V
Minimum Operating Temperature -55°C
Height 1.3mm

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