INFINEON TECHNOLOGIESIRLZ34NPBFTransistor: N-MOSFET
N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors. Features & Benefits Low on-resistance of 35mΩ reduces power loss High power dissipation capability of 68W enhances performance Operating temperature range from -55°C to +175°C ensures versatility Typical gate charge of 25nC at 5V enables faster switching Compact TO-220AB package enables efficient PCB layout Applications Utilised in DC-DC converters for efficient power conversion Appropriate for motor driver circuits in industrial automation Effective in power management systems for renewable energy Used in high-speed switching for telecommunications What is the maximum gate-source voltage? The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits. How does temperature affect its performance? The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions. Can it be used in high-frequency applications? Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers. What are the implications of low Rds(on)? A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF
This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.
Features & Benefits
- Low on-resistance of 35mΩ reduces power loss
- High power dissipation capability of 68W enhances performance
- Operating temperature range from -55°C to +175°C ensures versatility
- Typical gate charge of 25nC at 5V enables faster switching
- Compact TO-220AB package enables efficient PCB layout
Applications
- Utilised in DC-DC converters for efficient power conversion
- Appropriate for motor driver circuits in industrial automation
- Effective in power management systems for renewable energy
- Used in high-speed switching for telecommunications
What is the maximum gate-source voltage?
The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.
How does temperature affect its performance?
The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.
Can it be used in high-frequency applications?
Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.
What are the implications of low Rds(on)?
A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.