INFINEON TECHNOLOGIESIRLZ44NPBFTransistor: N-MOSFET
N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management. Features & Benefits Supports continuous drain current up to 47A for effective power delivery Operates at a drain-source voltage of 55V, enhancing application versatility Maximum power dissipation of 110W optimises thermal management Enhancement mode design ensures effective switching and control Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage High current handling with a low on-resistance of 22mΩ improves efficiency Applications Power supply circuits requiring efficient load switching DC-DC converters in renewable energy systems Automotive demanding high performance Motor control systems for enhanced operational efficiency Lighting systems requiring precise power regulation What is the operating temperature range of the device? The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions. How should this be mounted for optimal performance? It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation. Can it be used with other power management components? Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs. What are the implications of the gate threshold voltage range? A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF
This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.
Features & Benefits
- Supports continuous drain current up to 47A for effective power delivery
- Operates at a drain-source voltage of 55V, enhancing application versatility
- Maximum power dissipation of 110W optimises thermal management
- Enhancement mode design ensures effective switching and control
- Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
- High current handling with a low on-resistance of 22mΩ improves efficiency
Applications
- Power supply circuits requiring efficient load switching
- DC-DC converters in renewable energy systems
- Automotive demanding high performance
- Motor control systems for enhanced operational efficiency
- Lighting systems requiring precise power regulation
What is the operating temperature range of the device?
The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
How should this be mounted for optimal performance?
It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.
Can it be used with other power management components?
Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.
What are the implications of the gate threshold voltage range?
A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.