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MMIX1T600N04T2 875-2475

IXYSMMIX1T600N04T2Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 600A
Mã nhà sản xuất
MMIX1T600N04T2
Thương hiệu
IXYS
Mã kho
875-2475
Liên hệ
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N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series MOSFET Transistors, IXYS A wide range of advanced discrete Power MOSFET devices from IXYS

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

THÔNG SỐ KỸ THUẬT
Manufacturer IXYS
Manufacturer Part No. MMIX1T600N04T2
Channel Type N
Maximum Continuous Drain Current 600A
Maximum Drain Source Voltage 40V
Series GigaMOS, HiperFET
Package Type SMPD
Mounting Type Surface Mount
Pin Count 24
Maximum Drain Source Resistance 1.3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Maximum Power Dissipation 830W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 23.25mm
Number of Elements per Chip 1
Length 25.25mm
Maximum Operating Temperature +175°C
Transistor Material Si
Typical Gate Charge @ Vgs 590 nC @ 10 V
Minimum Operating Temperature -55°C
Height 5.7mm
Forward Diode Voltage 1.2V

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