IXYS SEMICONDUCTORIXFN200N07MOSFET Transistor HiPerFET N Channel 200 A 70 V 6000 µohm 10 V 4 V
Channel Type N ChannelContinuous Drain Current Id 200APower Dissipation 520WRds(on) Test Voltage 10V
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Ixys Semiconductor IXFN200N07. MOSFET Transistor HiPerFET N Channel 200 A 70 V 6000 µohm 10 V 4 V
Features:
- MOSFET Transistor
- HiPerFET
- N Channel
- 200 A
- 70 V
- 6000 µohm
- 10 V
- 4 V