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LITTELFUSELSIC1MO120G0040Transistor: N-MOSFET

Case TO247-4Drain current 50ADrain-source voltage 1.2kVFeatures of semiconductor devices Kelvin terminal
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LSIC1MO120G0040
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LSIC1MO120G0040
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📩 Liên hệ để có giá tốt: [email protected]

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 357W

THÔNG SỐ KỸ THUẬT
Manufacturer LITTELFUSE
Manufacturer Part No. LSIC1MO120G0040
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 50A
Pulsed drain current 130A
Power dissipation 357W
Case TO247-4
Gate-source voltage -5...20V
On-state resistance 40mΩ
Mounting THT
Gate charge 175nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Gross weight 5 g

Tài liệu: Product family

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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