Microchip TechnologyAT25320B-XHL-BIC: EEPROM memory
The Microchip serial electrically erasable programmable read only memory (EEPROM) organized as 4,096/8,192 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low-voltage operation are essential. It is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no separate erase cycle is required before write. Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 (0,0) and 3 (1,1) Datasheet describes mode 0 operation Low-voltage and standard-voltage operation 20 MHz clock rate 32-byte page mode Block write protection Protect 1/4, 1/2, or entire array Write protect WP pin and write disable instructions for both hardware and software data protection Self-timed write cycle 5 ms maximum High reliability Endurance 1,000,000 write cycles Data retention 100 years
The Microchip serial electrically erasable programmable read only memory (EEPROM) organized as 4,096/8,192 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low-voltage operation are essential. It is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no separate erase cycle is required before write.
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 (0,0) and 3 (1,1)
Datasheet describes mode 0 operation
Low-voltage and standard-voltage operation
20 MHz clock rate
32-byte page mode
Block write protection
Protect 1/4, 1/2, or entire array
Write protect WP pin and write disable instructions for both hardware and software data protection
Self-timed write cycle 5 ms maximum
High reliability
Endurance 1,000,000 write cycles
Data retention 100 years