Microchip TechnologyAT28HC64BF-12SUIC: EEPROM memory
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features: 8 Kbits x 8 (64 Kbit) 5 V ±10% Supply Parallel Interface 70ns access time Self-Timed Erase and Write Cycles Page Write and Byte Write Data Polling for end of write detection 2 ms Maximum Option Low Power Consumption: Read / Write current 40 mA (Max) Standby current TTL 2 mA (Max), CMOS 100 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time Self-Timed Erase and Write Cycles
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years