MICROCHIPTN2640K4-GN-Channel MOSFET, 400 V DPAK TN2640K4-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage