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NEXPERIABSH103,215Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 850mAMaximum Power Dissipation 500 mW
Mã nhà sản xuất
BSH103,215
Thương hiệu
Mã kho
484-5560
Liên hệ
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N-Channel MOSFET, up to 30V MOSFET Transistors, NXP Semiconductors

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. BSH103,215
Channel Type N
Maximum Continuous Drain Current 850mA
Maximum Drain Source Voltage 30V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 400mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150°C
Transistor Material Si
Number of Elements per Chip 1
Width 1.4mm
Length 3mm
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V
Minimum Operating Temperature -55°C
Height 1mm

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