NEXPERIAGAN111-650WSBQGallium Nitride (GaN) Transistor 650 V 21 A 0.114 ohm 4.9 nC TO-247 Through Hole
Continuous Drain Current Id 21ANo. of Pins 3PinsTransistor Case Style TO-247Transistor Mounting Through Hole
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Nexperia GAN111-650WSBQ. Gallium Nitride (GaN) Transistor 650 V 21 A 0.114 ohm 4.9 nC TO-247 Through Hole
Features:
- Gallium Nitride (GaN) Transistor
- 650 V
- 21 A
- 0.114 ohm
- 4.9 nC
- TO-247
- Through Hole