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NEXPERIAGAN140-650FBEZTransistor: N-JFET

Case DFN5060-5Drain current 17ADrain-source voltage 650VFeatures of semiconductor devices Kelvin terminal
Mã nhà sản xuất
GAN140-650FBEZ
Thương hiệu
Mã kho
GAN140-650FBEZ
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Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W

THÔNG SỐ KỸ THUẬT
Manufacturer NEXPERIA
Manufacturer Part No. GAN140-650FBEZ
Type of transistor N-JFET
Technology GaN
Polarisation unipolar
Kind of transistor HEMT
Drain-source voltage 650V
Drain current 17A
Pulsed drain current 32A
Power dissipation 113W
Case DFN5060-5
Gate-source voltage -1.4...7V
On-state resistance 0.14Ω
Mounting SMD
Gate charge 3.5nC
Kind of package tape
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Gross weight 1 g

Tài liệu: Documentation EN · Documentation EN

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