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NEXPERIAGAN190-650EBEZTransistor: N-JFET

Case DFN8080-8Drain current 11.5ADrain-source voltage 650VFeatures of semiconductor devices Kelvin terminal
Mã nhà sản xuất
GAN190-650EBEZ
Thương hiệu
Mã kho
GAN190-650EBEZ
Liên hệ
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Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A

THÔNG SỐ KỸ THUẬT
Manufacturer NEXPERIA
Manufacturer Part No. GAN190-650EBEZ
Type of transistor N-JFET
Technology GaN
Polarisation unipolar
Kind of transistor HEMT
Drain-source voltage 650V
Drain current 11.5A
Pulsed drain current 20.5A
Power dissipation 125W
Case DFN8080-8
Gate-source voltage -1.4...7V
On-state resistance 0.19Ω
Mounting SMD
Gate charge 2.8nC
Kind of package tape
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Gross weight 1 g

Tài liệu: Documentation EN · Documentation EN

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