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NEXPERIANX7002BKXBZTransistor: N-MOSFET x2

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 260mAMaximum Gate Threshold Voltage 2.1V
Mã nhà sản xuất
NX7002BKXBZ
Thương hiệu
Mã kho
153-1880
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). 60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic-level compatible Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. NX7002BKXBZ
Channel Type N
Maximum Continuous Drain Current 260mA
Maximum Drain Source Voltage 60V
Package Type DFN1010B-6
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 5.7Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Minimum Gate Threshold Voltage 1.1V
Maximum Power Dissipation 4032 mW
Maximum Gate Source Voltage 20V
Number of Elements per Chip 2
Length 1.15mm
Width 1.05mm
Typical Gate Charge @ Vgs 1 nC @ 10 V
Maximum Operating Temperature +150°C
Height 0.36mm
Minimum Operating Temperature -55°C

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