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NEXPERIAPBSS4480X,135Transistor: NPN

Maximum Collector Base Voltage 80VMaximum Collector Emitter Voltage 80VMaximum DC Collector Current 4AMaximum Emitter Base Voltage 5V
Mã nhà sản xuất
PBSS4480X,135
Thương hiệu
Mã kho
518-1700
Liên hệ
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Low Saturation Voltage NPN Transistors A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, Nexperia

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PBSS4480X,135
Transistor Type NPN
Maximum DC Collector Current 4A
Maximum Collector Emitter Voltage 80V
Package Type UPAK
Mounting Type Surface Mount
Maximum Power Dissipation 2.5W
Minimum DC Current Gain 250
Transistor Configuration Single
Maximum Collector Base Voltage 80V
Maximum Emitter Base Voltage 5V
Maximum Operating Frequency 150MHz
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Dimensions 1.6 x 4.6 x 2.6mm

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