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NEXPERIAPBSS5160U,115Transistor: PNP

Maximum Collector Base Voltage 80VMaximum Collector Emitter Voltage -60VMaximum DC Collector Current -1AMaximum Emitter Base Voltage 5V
Mã nhà sản xuất
PBSS5160U,115
Thương hiệu
Mã kho
485-353
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Low Saturation Voltage PNP Transistors A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, Nexperia

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PBSS5160U,115
Transistor Type PNP
Maximum DC Collector Current -1A
Maximum Collector Emitter Voltage -60V
Package Type UMT
Mounting Type Surface Mount
Maximum Power Dissipation 415 mW
Minimum DC Current Gain 200
Transistor Configuration Single
Maximum Collector Base Voltage 80V
Maximum Emitter Base Voltage 5V
Maximum Operating Frequency 185MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 1 x 2.2 x 1.35mm
Maximum Operating Temperature +150°C

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