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PMPB215ENEAX 151-3200

NEXPERIAPMPB215ENEAXTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 2.8AMaximum Gate Threshold Voltage 2.7V
Mã nhà sản xuất
PMPB215ENEAX
Thương hiệu
NEXPERIA
Mã kho
151-3200
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PMPB215ENEAX
Channel Type N
Maximum Continuous Drain Current 2.8A
Maximum Drain Source Voltage 80V
Package Type DFN2020
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 445mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.7V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 15.6W
Transistor Configuration Single
Maximum Gate Source Voltage 20V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 4.8 nC @ 10 V
Length 2.1mm
Width 2.1mm
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Automotive Standard AEC-Q101
Height 0.65mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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