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PMV100ENEAR 153-0784

NEXPERIAPMV100ENEARTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
PMV100ENEAR
Thương hiệu
NEXPERIA
Mã kho
153-0784
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PMV100ENEAR
Channel Type N
Maximum Continuous Drain Current 3A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 118mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 4.5W
Transistor Configuration Single
Maximum Gate Source Voltage 20V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 3.6 nC @ 10 V
Width 1.4mm
Length 3mm
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Height 1mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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