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NEXPERIAPMV16XNRTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 8.6AMaximum Gate Threshold Voltage 0.9V
Mã nhà sản xuất
PMV16XNR
Thương hiệu
Mã kho
170-5355
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1200 mW Target applications LED driver Power management Low-side load switch Switching circuits

Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability of 1200 mW

Target applications

LED driver

Power management

Low-side load switch

Switching circuits

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PMV16XNR
Channel Type N
Maximum Continuous Drain Current 8.6A
Maximum Drain Source Voltage 20V
Package Type TO-236
Series PMV16XN
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 33mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.9V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 6.94W
Transistor Configuration Single
Maximum Gate Source Voltage 12V
Number of Elements per Chip 1
Width 1.4mm
Maximum Operating Temperature +150°C
Length 3mm
Typical Gate Charge @ Vgs 13.4 nC @ 4.5 V
Height 1mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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