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PMV230ENEAR 153-1898

NEXPERIAPMV230ENEARTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 1.5AMaximum Gate Threshold Voltage 2.7V
Mã nhà sản xuất
PMV230ENEAR
Thương hiệu
NEXPERIA
Mã kho
153-1898
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

60V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits

60V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PMV230ENEAR
Channel Type N
Maximum Continuous Drain Current 1.5A
Maximum Drain Source Voltage 60V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 222mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.7V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1.45W
Transistor Configuration Single
Maximum Gate Source Voltage 20V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 3.9 nC @ 10 V
Width 1.4mm
Maximum Operating Temperature +150°C
Length 3mm
Height 1mm
Minimum Operating Temperature -55°C
Automotive Standard AEC-Q101

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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