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PMV50ENEAR 153-0664

NEXPERIAPMV50ENEARTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3.9AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
PMV50ENEAR
Thương hiệu
NEXPERIA
Mã kho
153-0664
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

THÔNG SỐ KỸ THUẬT
Manufacturer Nexperia
Manufacturer Part No. PMV50ENEAR
Channel Type N
Maximum Continuous Drain Current 3.9A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 69mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 3.9W
Transistor Configuration Single
Maximum Gate Source Voltage 20V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 6 nC @ 10 V
Length 3mm
Width 1.4mm
Maximum Operating Temperature +150°C
Height 1mm
Automotive Standard AEC-Q101
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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