NEXPERIAPSC1065H-QJ650V 10A, SiC Schottky Rectifier & Schottky Diode, 2-Pin DPAK R2P PSC1065H-QJ
The Nexperia Leading edge Silicon Carbide (SiC) Schottky diode is used for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behaviour combined with an outstanding figure-of-merit. The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.
Reduced system costs
High power density
System miniaturization
Reduced EMI
Qualified according to AEC-Q101