FDMD82100 Dual N-Channel MOSFET, 25 A, 100 V PowerTrench, 12-Pin PQFN ON Semiconductor [FDMD82100]; 166-3506
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PQFN |
| Mounting Type | Surface Mount |
| Pin Count | 12 |
| Maximum Drain Source Resistance | 35 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2.1 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 3.4mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5.1mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Height | 0.75mm |
| Series | PowerTrench |
| Maximum Operating Temperature | +150 °C |