FDS6990A Dual N-Channel MOSFET, 7.5 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor [FDS6990A]; 166-3244
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7.5 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 31 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.6 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Length | 4.9mm |
| Width | 3.9mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Series | PowerTrench |
| Height | 1.57mm |
| Typical Gate Charge @ Vgs | 12 nC @ 5 V |
| Maximum Operating Temperature | +150 °C |