ONSEMI1N5817RLGDiode: Schottky rectifying

ON Semi 1N5817/8/9 Axial Lead Rectifiers This series consist of metal-to-silicon power diode. These diodes comes in chrome barrier metal, oxide passivation and metal overlap contact. Benefits: Extremely Low VF Low Stored Charge Majority Carrier Conduction Low Power Loss/High Efficiency Features: Case: Epoxy, Molded Weight: 0.4 Gram Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band Typical Applications: High frequency inverters Free wheeling diodes Polarity protection diodes The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Extremely Low vF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Mechanical Characteristics Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Shipped in plastic bags, 1000 per bag. Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 Lead Temperature for Soldering Purposes: 260°C Max for 10 seconds These are Pb-Free Devices