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ONSEMI2N7000-D26ZTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.5VMaximum Continuous Drain Current 200mA
Mã nhà sản xuất
2N7000-D26Z
Thương hiệu
Mã kho
184-4881
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications. Voltage Controlled Small Signal Switch High Saturation Current Capability Rugged and Reliable High Density Cell Design for Low RDS(ON) Applications Small Servo Motor Control Power MOSFET Gate Drivers Assorted Switching Applications

These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.

Voltage Controlled Small Signal Switch

High Saturation Current Capability

Rugged and Reliable

High Density Cell Design for Low RDS(ON)

Applications

Small Servo Motor Control

Power MOSFET Gate Drivers

Assorted Switching Applications

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. 2N7000-D26Z
Channel Type N
Maximum Continuous Drain Current 200mA
Maximum Drain Source Voltage 60V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 9Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Length 5.2mm
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Width 4.19mm
Height 5.33mm
Forward Diode Voltage 1.5V
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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