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ONSEMIFDA38N30Transistor: N-MOSFET

Maximum Power Dissipation 312WKiểu lắp Through HoleNumber of Elements per Chip 1Pin Count 3
Mã nhà sản xuất
FDA38N30
Thương hiệu
Mã kho
186-8119
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. RDS(on) = 70mΩ ( Typ.)@ VGS = 10V, ID = 19A Low gate charge ( Typ. 60nC) Low Crss ( Typ. 60pF) ESD improved capability Applications This product is general usage and suitable for many different applications.

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

RDS(on) = 70mΩ ( Typ.)@ VGS = 10V, ID = 19A

Low gate charge ( Typ. 60nC)

Low Crss ( Typ. 60pF)

ESD improved capability

Applications

This product is general usage and suitable for many different applications.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDA38N30
Package Type TO-3P
Mounting Type Through Hole
Maximum Power Dissipation 312W
Pin Count 3
Number of Elements per Chip 1
Dimensions 16.2 x 5 x 18.9mm
Maximum Operating Temperature +150°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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