Skip to content

ONSEMIFDB2532Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 79AMaximum Power Dissipation 310W
Mã nhà sản xuất
FDB2532
Thương hiệu
Mã kho
759-8951
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Automotive N-Channel MOSFET, Fairchild Semiconductor Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Automotive N-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDB2532
Channel Type N
Maximum Continuous Drain Current 79A
Maximum Drain Source Voltage 150V
Series PowerTrench
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 48mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 310W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Typical Gate Charge @ Vgs 82 nC @ 10 V
Length 10.67mm
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Transistor Material Si
Width 11.33mm
Height 4.83mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare